2SA2056 2001-10-29 1 toshiba transistor silicon pnp epitaxial type 2SA2056 high-speed switching applications dc-dc converter applications strobe applications high dc current gain: h fe = 200 to 500 (i c = ? 0.5 a) low collector-emitter saturation voltage: v ce (sat) = ? 0.2 v (max) high-speed switching: t f = 90 ns (typ.) maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 50 v collector-emitter voltage v ceo ? 50 v emitter-base voltage v ebo ? 7 v dc i c ? 2.0 collector current pulse i cp ? 3.5 a base current i b ? 200 ma t = 10 s 1000 collector power dissipation dc p c (note 1) 625 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb ? 50 v, i e 0 D D ? 100 na emitter cut-off current i ebo v eb ? 7 v, i c 0 D D ? 100 na collector-emitter breakdown voltage v (br) ceo i c ? 10 ma, i b 0 ? 50 D D v h fe (1) v ce ? 2 v, i c ? 0.3 a 200 D 500 dc current gain h fe (2) v ce ? 2 v, i c ? 1.0 a 100 D D collector-emitter saturation voltage v ce (sat) i c ? 1.0 a, i b ? 0.033 a D D ? 0.2 v base-emitter saturation voltage v be (sat) i c ? 1.0 a, i b ? 0.033 a D D ? 1.1 v collector output capacitance c ob v cb ? 10 v, i e 0, f 1 mhz D 20 D pf rise time t r D 60 D storage time t stg D 250 D switching time fall time t f see figure 1 circuit diagram. v cc 30 v, r l 30 ? ? i b1 i b2 ? 33 ma D 90 D ns unit: mm jedec to-92 jeita D toshiba 2-3s1a weight: 0.01 g (typ.)
2SA2056 2001-10-29 2 marking w f figure 1 switching time test circuit & timin g chart i b2 i b1 20 s output input i b2 i b1 r l v cc duty cycle 1%
2SA2056 2001-10-29 3 collector current i c (a) base-emitter saturation voltage v be (sat) (v) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) h fe ? i c dc current gain h fe collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) v be (sat) ? i c base-emitter voltage v be (v) i c ? v be common emitte r ta 25c single nonrepetitive pulse 60 40 30 20 10 6 i b 2 ma 0 3 2.4 1.8 1.2 0.6 4 80 100 0 0.8 2.4 1.6 0.4 2 1.2 0.001 0.01 0.1 1 10 1 10 100 1000 10000 common emitter v ce 2 v single nonrepetitive pulse 55 ta 100c 25 0.001 1 0.1 0.01 0.001 0.01 0.1 1 10 common emitter i c /i b 30 single nonrepetitive pulse 25 55 ta 100c 0.001 0.01 0.1 1 10 10 0.1 1 25 common emitter i c /i b 30 single nonrepetitive pulse 55 ta 100c common emitter v ce 2 v single nonrepetitive pulse ta 100c 55 25 1.8 0 0 0.2 0.4 0.6 1.0 1.2 0.8 0.6 1.2 2.4 3.0
2SA2056 2001-10-29 4 pulse width t w (s) r th ? t w transient thermal resistance r th (c/w) collector-emitter voltage v ce (v) safe operating area collector current i c (a) curves should be applied in thermal limited area. single nonrepetitive pulse ta 25c mounted on fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ) 1000 1 0.001 100 10 0.01 0.1 1 10 100 1000 10 0.01 0.1 1 i c max (pulsed) dc operation * (ta 25c) v ceo max 10 s 100 s 1 ms 100 ms * 10 ms 10 s * : single nonrepetitive pulse ta 25c note that the curves for 100 ms * , 10 s * and dc operation * will be different when the devices aren?t mounted on an fr4 board (glass epoxy, 1.6 mm thick, cu area: 645 mm 2 ). these characteristic curves must be derated linearly with increase in temperature. i c max (continuous) 0.1 1 10 100 0.5 5 50
2SA2056 2001-10-29 5 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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